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4N0607 |
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| Part Number | 4N0607 |
| Manufacturer | VBsemi |
| Description | 4N0607-VB TO252 4N0607-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.00... |
| Features |
• TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, T... |
| Document |
 4N0607 Data Sheet
PDF 250.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4N0607 |
VBsemi |
TO220 N-Channel MOSFET |
|
| 2 | 4N03L02 |
Infineon |
Power-Transistor |
|
| 3 | 4N041R1 |
Infineon |
Power-Transistor |
|
| 4 | 4N04R7 |
Infineon |
Power-Transistor |
|
| 5 | 4N04R8 |
Infineon |
Power-Transistor |
|
| 6 | 4N10 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 4N100 |
UTC |
N-CHANNEL MOSFET |
|
| 8 | 4N100-FC |
UTC |
N-CHANNEL POWER MOSFET |
|
| 9 | 4N100-FCQ |
UTC |
N-CHANNEL MOSFET |
|
| 10 | 4N120 |
UTC |
N-CHANNEL MOSFET |
|
Desde 2024. D4U Semiconductor.
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