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4N10 |
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| Part Number | 4N10 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE M. |
| Features |
·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 16 A PD Total Dissipation @TC=25℃ 20 W Tj Max. Operating Junction Tem. |
| Datasheet |
 4N10 Data Sheet
PDF 227.29KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4N100 |
UTC |
N-CHANNEL MOSFET |
|
| 2 | 4N100-FC |
UTC |
N-CHANNEL POWER MOSFET |
|
| 3 | 4N100-FCQ |
UTC |
N-CHANNEL MOSFET |
|
| 4 | 4N120 |
UTC |
N-CHANNEL MOSFET |
|
| 5 | 4N135-P |
UTC |
N-CHANNEL POWER MOSFET |
|
| 6 | 4N150 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 7 | 4N150 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 8 | 4N150-P |
UTC |
N-CHANNEL POWER MOSFET |
|
| 9 | 4N03L02 |
Infineon |
Power-Transistor |
|
| 10 | 4N041R1 |
Infineon |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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