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4N80 |
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| Part Number | 4N80 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed... |
| Features |
TERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IF=4A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2.0A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 800V; VGS= 0
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V; ID=4A; VDD=400V; RG=25Ω
MIN TYPE MAX UNIT
800
V
3.0
5.0
V
1.4
V
2.0
3.6
Ω
±100 nA
10
µA
100
40 ns
80
80
NOTICE： ... |
| Document |
 4N80 Data Sheet
PDF 235.24KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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