4N80 |
Part Number | 4N80 |
Manufacturer | nELL |
Description | (4A, 800Volts) The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. th... |
Features |
RDS(ON) = 3.6Ω @ VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance (CRSS = 9pF typical) Fast switching capability
100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature
D
GDS
TO-220AB (4N80A)
GDS
TO-220F (4N80AF)
D (Drain)
G (Gate)
PRODUCT SUMMARY
ID (A)
4
VDSS (V)
800
RDS(ON) (Ω)
3.6 @ VGS = 10V
QG(nC) max.
25
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to So... |
Document |
4N80 Data Sheet
PDF 373.53KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 4N80 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 4N80 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
3 | 4N80-FC |
UTC |
N-CHANNEL POWER MOSFET | |
4 | 4N80-FCQ |
UTC |
800V N-CHANNEL POWER MOSFET | |
5 | 4N80-N |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 4N80E |
Motorola |
MTB4N80E |