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MTB55N06Z |
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| Part Number | MTB55N06Z |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB55N06Z/D Advance Information TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This... |
| Features |
ppressor –Absorbs High Energy in the Avalanche Mode • ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model. D MTB55N06Z TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mΩ ™ G CASE 418B –02, Style 2 D2PAK S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous Gate –to –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ TC = 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipati... |
| Document |
 MTB55N06Z Data Sheet
PDF 146.61KB |
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