Busque con el número de pieza junto con el fabricante o la descripción
MTB50P03HDL |
Click to view a larger image
| Part Number | MTB50P03HDL |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Devic... |
| Features |
pected voltage transients. • Avalanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation • Available in 24 mm 13 –inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage —... |
| Document |
 MTB50P03HDL Data Sheet
PDF 182.06KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTB50P03HDL |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 2 | MTB5000 |
Marktech Corporate |
LED Lamp Arrays |
|
| 3 | MTB50N06EL |
Motorola |
TMOS POWER FET |
|
| 4 | MTB50N06V |
Motorola |
TMOS POWER FET |
|
| 5 | MTB50N06V |
ON Semiconductor |
Power MOSFET |
|
| 6 | MTB50N06VL |
Motorola |
TMOS POWER FET |
|
Desde 2024. D4U Semiconductor.
|