MTB50P03HDL Datasheet. existencias, precio

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MTB50P03HDL TMOS POWER FET


MTB50P03HDL
Part Number MTB50P03HDL
Distributor Stock Price Buy
ON Semiconductor
MTB50P03HDL
Part Number MTB50P03HDL
Manufacturer ON Semiconductor
Title P-Channel Power MOSFET
Description MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high s.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• MVB Prefix for Automotive and Other Applications Requiring Unique Site a.

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