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MTB52N06V TMOS POWER FET


MTB52N06V
Part Number MTB52N06V
Distributor Stock Price Buy
ON Semiconductor
MTB52N06V
Part Number MTB52N06V
Manufacturer ON Semiconductor
Title Power MOSFET
Description MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices a.
Features dc 60 Vdc ± 20 ± 25 52 41 182 188 1.25 3.0 Vdc Vpk Adc Apk Watts W/°C Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 52 Apk, L = 0.3 mH, RG = 25 Ω) EAS 406 mJ Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (Note 1.) RθJC RθJA RθJA.

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