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MTB52N06V |
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| Part Number | MTB52N06V |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high ... |
| Features |
dc 60 Vdc
± 20 ± 25
52 41 182
188 1.25 3.0
Vdc Vpk Adc
Apk Watts W/°C Watts
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 175
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 52 Apk, L = 0.3 mH, RG = 25 Ω)
EAS
406 mJ
Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (Note 1.)
RθJC RθJA RθJA
°C/W 0.8 62.5 50
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
http://... |
| Document |
 MTB52N06V Data Sheet
PDF 256.27KB |
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Desde 2024. D4U Semiconductor.
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