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Kexin |
NPN Transistors ● Audio amplifier ● Flash unit of camera ● Switching circuit 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Colle |
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Kexin |
NPN Silicon Epitaxial Transistor World standard miniature package:SOT-89. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) * Total powe |
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Kexin |
NPN Silicon Epitaxial Transistor World standard miniature package:SOT-89. High collector-emitter voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) * Total power |
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Kexin |
NPN Silicon Epitaxial Transistor High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector l power dissipation Junction tempe |
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Kexin |
NPN Transistors ● Audio amplifier ● Flash unit of camera ● Switching circuit ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Col |
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KEXIN |
NPN Transistors ● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SB906 +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +1.50 |
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Kexin |
NPN Silicon Epitaxial Transistor World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emi |
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Kexin |
NPN Transistors ● Low Collector-to-Emitter Saturation Voltage ● Fast Switching Speed ● High fT. ● Complementary to 2SB1216 +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.155 .5 5 |
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Kexin |
Medium Power Transistor High current.(IC=5A). Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Ma |
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Kexin |
NPN Transistors ● High DC Current gain. ● Complimentary to 2SB624 Transistors NPN Transistors 2SD596 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. |
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Kexin |
NPN Transistors ● Low Collector-to-Emitter Saturation Voltage ● Fast Switching Speed ● High Current And High fT. ● Complementary to 2SB1203 + 0.29 .7 0 -0.2 + 0.151 .5 0 -0.15 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.80+0.1 -0.1 0.127 m ax |
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Kexin |
NPN Transistors Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Volt |
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Guangdong Kexin Industrial |
Silicon NPN Transistor Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base volta |
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Guangdong Kexin Industrial |
Silicon NPN Transistor +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter volt |
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Kexin |
Silicon NPN Transistor High Voltage VCEO=150V +0.2 9.70 -0.2 +0.15 0.50 -0.15 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collecto |
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Kexin |
Silicon NPN Transistor +0.2 9.70 -0.2 +0.15 0.50 -0.15 +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High collector-base voltage (Emitter open) VCBO 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings |
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Kexin |
Silicon NPN Transistor +0.2 9.70 -0.2 +0.15 0.50 -0.15 Low collector-emitter saturation voltage VCE(sat) +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratin |
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Kexin |
Silicon NPN Transistor High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low collector to emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2. |
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Kexin |
Silicon NPN Transistor High collector to emitter voltage VCEO. Large collector power dissipation PC. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage 2SD968 2SD968A Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Peak collector curr |
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Kexin |
NPN Epitaxial Planar Silicon Transistor Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’ s further min |
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Desde 2024. D4U Semiconductor.
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