Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SD1816 |
| Part Number | 2SD1816 |
| Manufacturer | ON Semiconductor |
| Title | Bipolar Transistor |
| Description | 2SB1216, 2SD1816 Bipolar Transistor (−)100V, (−)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable . |
| Features |
• Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Switching Applications ELECTRICAL CONNECTION 2,4 2,4 1 3 2SB1216 1 3 2SD1816 MARKING 1 : Base 2 : Collector 3 : Emitter. |
2SD1816 |
| Part Number | 2SD1816 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·High fT ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,Hig. |
| Features | Semiconductor 2SD1816 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 200mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltag. |
2SD1816 |
| Part Number | 2SD1816 |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP/NPN Transistor |
| Description | Ordering number:EN2540A PNP/NPN Epitaxial Planar Silicon Transistors www.DataSheet4U.com 2SB1216/2SD1816 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions unit. |
| Features |
· Low collector-to-emitter saturation voltage. · Good linearity of hFE. · Small and slim package facilitating compactness of sets. · High fT. · Fast switching time. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1216/2SD1816] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifi. |
2SD1816 |
| Part Number | 2SD1816 |
| Manufacturer | SeCoS |
| Title | NPN Epitaxial Planar Silicon Transistor |
| Description | Elektronische Bauelemente 2SD1816 4A , 120V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Collector-to-Emitter Saturation Voltage Excllent Linearity of hFE High fT Fast Switching Time TO-251 A BC D MARKING CODE 1816 =. |
| Features | Low Collector-to-Emitter Saturation Voltage Excllent Linearity of hFE High fT Fast Switching Time TO-251 A BC D MARKING CODE 1816 = Date Code Collector 2 1 Base GE K F H MJ P 3 Emitter REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90 5.50 2.15 2.40 0.43 0.90 6.50 7.50 7.20 9.65 REF. G H J K M P Millimeter Min. Max. 5.40 6.25 0.85 1.50 2.30 0.60 1.05 0.50 0.90 0.43 0.62 ABSOLUTE . |
2SD1816 |
| Part Number | 2SD1816 |
| Manufacturer | UTC |
| Title | NPN TRANSISTOR |
| Description | , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-011.I . |
| Features | * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1816L-x-TA3-T 2SD1816G-x-TA3-T 2SD1816L-x-TF1-T 2SD1816G-x-TF1-T 2SD1816L-x-TF3-T 2SD1816G-x-TF3-T 2SD1816L-x-TM3-T 2SD1816G-x-TM3-T 2SD1816L-x-TMS-T 2SD1816G-. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1812 |
Rohm |
NPN Transistor |
|
| 2 | 2SD1815 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1815 |
JCET |
NPN Transistor |
|
| 4 | 2SD1815 |
GME |
NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SD1815 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD1815 |
Kexin |
Transistors |
|
| 7 | 2SD1815 |
ON Semiconductor |
Bipolar Transistor |
|
| 8 | 2SD1815 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|
| 9 | 2SD1816L |
Inchange |
Silicon NPN Power Transistor |
|
| 10 | 2SD1817 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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