Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SD1803 |
| Part Number | 2SD1803 |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP/NPN Epitaxial Planar Silicon Transistors |
| Description | Ordering number:EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions unit:mm 2045B [2SB1203/2SD1803] Featu. |
| Features |
· Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1203/2SD1803] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products . |
2SD1803 |
| Part Number | 2SD1803 |
| Manufacturer | Inchange Semiconductor |
| Title | TO-126 Silicon NPN Power Transistor |
| Description | ·High Collector Current-IC= 5.0A ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A ·Good Linearity of hFE ·Complement to Type 2SB1203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,high-speed inverters,converters, an. |
| Features | MBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V hFE-2 DC Current Gain IC= 4A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V COB Ou. |
2SD1803 |
| Part Number | 2SD1803 |
| Manufacturer | UTC |
| Title | NPN EPITAXIAL SILICON TRANSISTOR |
| Description | The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switching Time. ORDERING INFORMATION Ordering . |
| Features | *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switching Time. ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 12345678 Packing 2SD1803L-x-TM3-T 2SD1803G-x-TM3-T TO-251 B C E - - - - - Tube 2SD1803L-x-TN3-R 2SD1803G-x-TN3-R TO-252 B C E - - - - - Tape Reel 2SD1803L-x-K08-5060-R 2SD1803G. |
2SD1803 |
| Part Number | 2SD1803 |
| Manufacturer | GME |
| Title | NPN Epitaxial Planar Silicon Transistors |
| Description | NPN Epitaxial Planar Silicon Transistors FEATURES z Low collector-to-emitter saturation voltage. Pb z High current and high fT. Lead-free z Excellent linerarity of hFE. z Fast switching time. Production specification 2SD1803 APPLICATIONS z High-Current Switching Applications. TO-251 TO-252. |
| Features | z Low collector-to-emitter saturation voltage. Pb z High current and high fT. Lead-free z Excellent linerarity of hFE. z Fast switching time. Production specification 2SD1803 APPLICATIONS z High-Current Switching Applications. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VC. |
2SD1803 |
| Part Number | 2SD1803 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package. / Features ，，fT ，，。 Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications 、、。 Relay drivers, high-speed inverters, general high-current switching applications. / Equivalen. |
| Features | ，，fT ，，。 Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications 、、。 Relay drivers, high-speed inverters, general high-current switching applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 70～140 R 100～200 S 140～280 T. |
2SD1803 |
| Part Number | 2SD1803 |
| Manufacturer | ON Semiconductor |
| Title | Bipolar Transistor |
| Description | Ordering number : EN2085C 2SB1203/2SD1803 Bipolar Transistor (–)50V, (–)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • http://onsemi.com Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features • • • • High current and high fT Low. |
| Features |
• • • • High current and high fT Low collector-to-emitter saturation voltage • Fast switching speed Excellent linearity of hFE Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Specifications ( ): 2SB1203 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (. |
2SD1803 |
| Part Number | 2SD1803 |
| Manufacturer | INCHANGE |
| Title | TO-252 NPN Transistor |
| Description | ·High Collector Current-IC= 5.0A ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A ·Good Linearity of hFE ·Complement to Type 2SB1203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,high-speed inverters,converters, an. |
| Features | MBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V hFE-2 DC Current Gain IC= 4A ; VCE= 2V hFE-1 Classifications Q R S T 70-140 100-200 140-280 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD180 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SD1800 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
|
| 3 | 2SD1801 |
ON Semiconductor |
Bipolar Transistor |
|
| 4 | 2SD1801 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD1801 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SD1802 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SD1802 |
TRANSYS |
NPN Transistor |
|
| 8 | 2SD1802 |
GME |
NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SD1802 |
ON Semiconductor |
Bipolar Transistor |
|
| 10 | 2SD1802 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
Desde 2024. D4U Semiconductor.
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