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2SD1006 NPN TRANSISTOR

2SD1006


2SD1006
Part Number 2SD1006
Distributor Stock Price Buy

2SD1006

Kexin
2SD1006
Part Number 2SD1006
Manufacturer Kexin
Title NPN Silicon Epitaxial Transistor
Description SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Transistors Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector l power dis.
Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector l power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating 100 100 5 0.7 1.2 2 150 -55 to +150 Unit V V V .

2SD1006

AiT Semiconductor
2SD1006
Part Number 2SD1006
Manufacturer AiT Semiconductor
Title NPN SILICONEPITAXIAL TRANSISTORS
Description The 2SD1006 is available in SOT89-3 package MACHANICAL DATA  Case: SOT89-3  High collector to emitter voltage: VCEO>100V  Audio Frequency Power Amplifier Application  Complement to PNP type 2SB805 ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number 2SD1006-HM SOT89-3 2SD1006-H.
Features C 0.7 A Collector Current(pulse)* IC(pu) 1.2 A Collector I Power Dissipation** PC 2 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not impli.

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