Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SD1005 |
| Part Number | 2SD1005 |
| Manufacturer | HOTTECH |
| Title | GENERAL PURPOSE TRANSISTOR |
| Description | REPLACEMENT TYPE : 2SD1005 FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity HED1005(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 100 Collector-Emitter Voltage . |
| Features |
Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity HED1005(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 100 Collector-Emitter Voltage VCEO 80 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 1 Collector Power Dissipation PC 500 Thermal Resistance F. |
2SD1005 |
| Part Number | 2SD1005 |
| Manufacturer | Kexin |
| Title | NPN Silicon Epitaxial Transistor |
| Description | SMD Type NPN Silicon Epitaxia 2SD1005 Transistors Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter . |
| Features | World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Total power dissipation at 25 ambient temperature * Tj Tstg 150 -55 to +150 Symbol VCB. |
2SD1005 |
| Part Number | 2SD1005 |
| Manufacturer | SeCoS |
| Title | NPN Plastic Encapsulated Transistor |
| Description | 2SD1005 Elektronische Bauelemente 1A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package SOT-89 4 High Breakdown Voltage Excellent DC Current Gain Linearity A B C 3 E C 1 2 CLASSIFICATION OF hFE(1) Produ. |
| Features | Small Flat Package SOT-89 4 High Breakdown Voltage Excellent DC Current Gain Linearity A B C 3 E C 1 2 CLASSIFICATION OF hFE(1) Product-Rank Range Marking 2SD1005-W 90~180 BW 2SD1005-V 135~270 BV 2SD1005-U B E D F G H K J L 200~400 BU Collector 2 PACKAGE INFORMATION Package SOT-89 MPQ 1K Leader Size 7 inch 1 Base REF. A B C D E F 3 Emitter Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.4. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1000 |
NEC |
NPN TRANSISTOR |
|
| 2 | 2SD1000 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 3 | 2SD1001 |
NEC |
NPN TRANSISTOR |
|
| 4 | 2SD1001 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 5 | 2SD1005-U |
MCC |
NPN Silicon Power Transistors |
|
| 6 | 2SD1005-V |
MCC |
NPN Silicon Power Transistors |
|
| 7 | 2SD1005-W |
MCC |
NPN Silicon Power Transistors |
|
| 8 | 2SD1006 |
NEC |
NPN TRANSISTOR |
|
| 9 | 2SD1006 |
AiT Semiconductor |
NPN SILICONEPITAXIAL TRANSISTORS |
|
| 10 | 2SD1006 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
Desde 2024. D4U Semiconductor.
|