2SD596 |
|
Part Number | 2SD596 |
Manufacturer | Kexin |
Description | SMD Type ■ Features ● High DC Current gain. ● Complimentary to 2SB624 Transistors NPN Transistors 2SD596 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter . |
Features |
● High DC Current gain. ● Complimentary to 2SB624 Transistors NPN Transistors 2SD596 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 30 25 5 700 200 150 -55 to 150 U. |
Datasheet |
2SD596 Data Sheet
PDF 1.19MB |
Distributor | Stock | Price | Buy |
---|
2SD596 |
Part Number | 2SD596 |
Manufacturer | BLUE ROCKET ELECTRONICS |
Title | Silicon NPN transistor |
Description | . |
Features |
. |
2SD596 |
Part Number | 2SD596 |
Manufacturer | SeCoS |
Title | NPN Plastic Encapsulated Transistor |
Description | Elektronische Bauelemente 2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current gain Complementary to 2SB624 MARKING DV4 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3. |
Features |
High DC Current gain Complementary to 2SB624
MARKING DV4
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
F
REF.
A B C D E F
D
GH
Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50
REF.
G H J K L
J
Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177
0.6 REF. 0.89 1.02
Collector
3
1
Base
ABSOLUTE MAX. |
2SD596 |
Part Number | 2SD596 |
Manufacturer | Rectron |
Title | BIPOLAR TRANSISTORS |
Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SD596 FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC . |
Features |
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
* Collector current
ICM :
0.7 A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRI. |
2SD596 |
Part Number | 2SD596 |
Manufacturer | GME |
Title | Silicon NPN Transistor |
Description | Production specification Silicon Epitaxial Planar Transistor FEATURES Pb Micro package Lead-free Complementary to 2SB624 PNP Transistor High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA) 2SD596 APPLICATIONS Audio frequency general purpose amplifier applications ORDERING INFORMATIO. |
Features |
Pb
Micro package Lead-free Complementary to 2SB624 PNP Transistor High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA) 2SD596 APPLICATIONS Audio frequency general purpose amplifier applications ORDERING INFORMATION Type No. Marking 2SD596 DV1/DV2/DV3/DV4/DV5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector. |
2SD596 |
Part Number | 2SD596 |
Manufacturer | WEJ |
Title | NPN Transistor |
Description | RoHS 2SD596 2SD596 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 Collector current ICM: 0.7 Collector-base voltage V(BR)CBO: 30 W (Tamb=25℃) A V SOT-23-3L 1. 9 0. 95¡ À0. 025 1. 02 TD1. BASE .,L2. EMITTER CO3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 2. 92¡ À0. 05 Operati. |
Features |
Power dissipation
PCM:
0.2
Collector current
ICM: 0.7 Collector-base voltage
V(BR)CBO:
30
W (Tamb=25℃) A V
SOT-23-3L
1. 9
0. 95¡ À0. 025
1. 02
TD1. BASE .,L2. EMITTER CO3. COLLECTOR
2. 80¡ À0. 05 1. 60¡ À0. 05
0. 35 2. 92¡ À0. 05
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
NParameter O. |
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor |
|
|
|
Micro Electronics |
Silicon Transistor |
|
|
|
Micro Electronics |
Silicon Transistor |
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor |
|
|
|
Panasonic Semiconductor |
Silicon NPN Transistor |
|
|
|
NEC |
NPN Silicon Transistor |
|
|
|
INCHANGE |
NPN Transistor |
|
|
|
Inchange Semiconductor |
Power Transistor |
|
|
|
INCHANGE |
NPN Transistor |
|
|
|
USHA |
Transistors |
|
Desde 2024. D4U Semiconductor. | Contáctenos | Política de Privacidad