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2SD596A |
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| Part Number | 2SD596A |
| Manufacturer | NEC |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no . |
| Features |
• Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA) PACKAGE DRAWING (Unit: mm) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range VCBO 30 V VCEO 25 V VEBO 5.0 V IC 700 mA PT 200 mW Tj 150 °C Tstg −55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Saturation Voltage Base to Emitter Vo. |
| Datasheet |
 2SD596A Data Sheet
PDF 556.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD596 |
GME |
Silicon NPN Transistor |
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| 2 | 2SD596 |
NEC |
NPN Silicon Transistor |
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| 3 | 2SD596 |
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Silicon NPN transistor |
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| 4 | 2SD596 |
SeCoS |
NPN Plastic Encapsulated Transistor |
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| 5 | 2SD596 |
Rectron |
BIPOLAR TRANSISTORS |
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| 6 | 2SD596 |
WEJ |
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| 7 | 2SD596 |
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| 8 | 2SD592 |
Panasonic Semiconductor |
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| 9 | 2SD592 |
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| 10 | 2SD592A |
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Desde 2024. D4U Semiconductor.
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