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2SD504 |
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| Part Number | 2SD504 |
| Manufacturer | INCHANGE |
| Description | ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO . |
| Features | ETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA VBE(on) Base-Emitter On voltage IC= 6A ; VCE= 3V ICEO Collector Cutoff current ICBO Collector Cutoff current IEBO Emitter Cut-off current VCE= 30V; IB= 0 VCB= 60V;IE= 0 VCB= 60V;IE= 0;TC= 150℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 6A ; VCE= 3V hFE-2 DC Current Gain IC= 12A ; VCE= 3V COB Output Capacitance IE=0 ; VCB= 10V;ftest= 0.1MHz MIN MAX UNIT 60 V 2.0 . |
| Datasheet |
 2SD504 Data Sheet
PDF 179.61KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD5011 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD5041 |
USHA |
Transistors |
|
| 3 | 2SD506 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD5070 |
Inchange Semiconductor |
Power Transistor |
|
| 5 | 2SD5071 |
SavantIC |
Silicon NPN Power Transistors |
|
| 6 | 2SD5071 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 7 | 2SD5072 |
Fairchild |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
|
| 8 | 2SD5072 |
Savantic |
Silicon NPN Power Transistors |
|
| 9 | 2SD5072 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2SD5074 |
Inchange Semiconductor |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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