Busque con el número de pieza junto con el fabricante o la descripción
2SD5011 |
Click to view a larger image
| Part Number | 2SD5011 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Colle. |
| Features | ector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A ;IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 130 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage tf Fall Time IF= 3.5A IC= 3A, IB1= 0.8A; IB2= -1.6A RL= 66.7Ω;VCC= 200V 2.0 V 0.4 us NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. |
| Datasheet |
 2SD5011 Data Sheet
PDF 189.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD504 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD5041 |
USHA |
Transistors |
|
| 3 | 2SD506 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD5070 |
Inchange Semiconductor |
Power Transistor |
|
| 5 | 2SD5071 |
SavantIC |
Silicon NPN Power Transistors |
|
| 6 | 2SD5071 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 7 | 2SD5072 |
Fairchild |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
|
| 8 | 2SD5072 |
Savantic |
Silicon NPN Power Transistors |
|
| 9 | 2SD5072 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2SD5074 |
Inchange Semiconductor |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
|