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2SD597 |
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| Part Number | 2SD597 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base. |
| Features | ter Breakdown Voltage IC= 10mA; RBE= ∞ 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB=100V; IE=0 0.1 mA IEBO Emitter Cutoff current VEB=6V; IC=0 0.1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 40 200 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 30 fT Current-Gain—Bandwidth Product IC= 0.5 A;VCE= 10V;ftest = 1MHz 7 MHz NOTICE： ISC . |
| Datasheet |
 2SD597 Data Sheet
PDF 192.03KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD592 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD592 |
Micro Electronics |
Silicon Transistor |
|
| 3 | 2SD592A |
Micro Electronics |
Silicon Transistor |
|
| 4 | 2SD592A |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SD592A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD596 |
GME |
Silicon NPN Transistor |
|
| 7 | 2SD596 |
NEC |
NPN Silicon Transistor |
|
| 8 | 2SD596 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 9 | 2SD596 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 10 | 2SD596 |
Rectron |
BIPOLAR TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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