Infineon PTF Hoja de datos

No.	parte #	Fabricante	Descripción
1	PTFB211503EL	Infineon	Thermally-Enhanced High Power RF LDMOS FETs include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
2	PTFB193404F	Infineon	Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-
3	PTFB211501F	Infineon	Thermally-Enhanced High Power RF LDMOS FETs include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 ACP (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive Up VDD = 3
4	PTF080901E	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Mo
5	PTF211301A	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42 dBc Typical CW performanc
6	PTFC262157FH	Infineon	Thermally-Enhanced High Power RF LDMOS FET include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262157FH Package H-34288G-4/2 Gain (dB) Drain Efficiency
7	PTFB182503EL	Infineon Technologies	Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reli
8	PTFA080551F	Infineon	Thermally-Enhanced High Power RF LDMOS FETs include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2 P
9	PTFA210701F	Infineon	Thermally-Enhanced High Power RF LDMOS FET include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Packag
10	PTFB212503FL	Infineon	Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior
11	PTFB210801FA	Infineon	Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB210801FA Package
12	PTFB201402FC	Infineon	High Power RF LDMOS Field Effect Transistor • Broadband internal matching • Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56% • Integrated ESD protection • Excellent thermal stability • Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, pe
13	PTFB211503FL	Infineon	Thermally-Enhanced High Power RF LDMOS FETs include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
14	PTF080451E	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body M
15	PTF210901	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P –1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated
16	PTFA072401EL	Infineon	Thermally-Enhanced High Power RF LDMOS FETs • • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc Typical CW performance, 770 MHz, 30 V - Output power
17	PTFA091503EL	Infineon	Thermally-Enhanced High Power RF LDMOS FETs internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD =
18	PTFA210301E	Infineon	Thermally-Enhanced High Power RF LDMOS FET • Thermally-enhanced packaging, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion = –50 dBc - Adjace
19	PTFA220081M	Infineon	High Power RF LDMOS Field Effect Transistor • Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR = –40 dBc • Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB • Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency
20	PTFB212503EL	Infineon	Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior