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PTFB211503FL |
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| Part Number | PTFB211503FL |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features include I/O matching, hig... |
| Features |
include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB211503EL H-33288-6
PTFB211503FL H-34288-4/2
IMD (dBc) Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30 30 Efficiency
-35 25
-40 20
-45
IMD Up
ACPR 15
-50
IMD Low
10
-55 5
-60 0 31 33 35 37 39 41 43 45 47 49 Output Po... |
| Document |
 PTFB211503FL Data Sheet
PDF 457.97KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PTFB211503EL |
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| 2 | PTFB211501E |
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| 5 | PTFB211803FL |
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| 6 | PTFB210801FA |
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Desde 2024. D4U Semiconductor.
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