Busque con el número de pieza junto con el fabricante o la descripción
PTFB210801FA |
Click to view a larger image
| Part Number | PTFB210801FA |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and... |
| Features |
include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB210801FA Package H-37265-2
ACPR (dBc) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA,
ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR
-15 Adj Lower
-20 Adj Upper
-25 Alt -30 Efficiency
-35
-40
-45
45 40 35 30 25 20 15 10
-50 5 36 37 38 39 40 41 42 43 44 45 46 47 48 Output Power (dBm)
Features
• Broadband internal matching • Typical single-carrier... |
| Document |
 PTFB210801FA Data Sheet
PDF 468.56KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PTFB211501E |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
| 2 | PTFB211501F |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
| 3 | PTFB211503EL |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
| 4 | PTFB211503FL |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
| 5 | PTFB211803EL |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
| 6 | PTFB211803FL |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
Desde 2024. D4U Semiconductor.
|