PTFA210701F |
Part Number | PTFA210701F |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matc... |
Features |
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA210701E Package H-36265-2
PTFA210701F Package H-37265-2
IM3 (dBc), ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-30 35
-35 Efficiency
-40 IM3
-45
-50
ACPR
30 25 20 15
-55 10
-60 30
32 34 36 38 40 42 Average Output Power (dBm)
5 44
Features
• T... |
Document |
PTFA210701F Data Sheet
PDF 375.96KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PTFA210701E |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PTFA210301E |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTFA210601E |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTFA210601F |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTFA211001E |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTFA211801E |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |