| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P –1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated |
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Infineon |
IGBT • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules Applications: • medium power drives C G E Chip Type VCE ICn Die Si |
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Infineon |
IGBT • 1200V Trench + Field stop technology • low VCE(sat) • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium / high power modules Applications: • medium / high power drives C G E Chip Type VCE ICn |
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Infineon |
Analog AMR/GMR Angle Sensors • Single and dual die sensor with AMR or GMR technology • Separate supply pins for top and bottom sensor • Low current consumption and quick start up • 180°(AMR) and 360°(GMR) contactless angle measurement • Output amplitude optimized for circuits wi |
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Infineon |
Analog AMR/GMR Angle Sensors • Single and dual die sensor with AMR or GMR technology • Separate supply pins for top and bottom sensor • Low current consumption and quick start up • 180°(AMR) and 360°(GMR) contactless angle measurement • Output amplitude optimized for circuits wi |
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Infineon |
IGBT • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type VCE ICn Die Size |
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Infineon |
Analog AMR/GMR Angle Sensors • Single and dual die sensor with AMR or GMR technology • Separate supply pins for top and bottom sensor • Low current consumption and quick start up • 180°(AMR) and 360°(GMR) contactless angle measurement • Output amplitude optimized for circuits wi |
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Infineon |
Analog AMR/GMR Angle Sensors • Single and dual die sensor with AMR or GMR technology • Separate supply pins for top and bottom sensor • Low current consumption and quick start up • 180°(AMR) and 360°(GMR) contactless angle measurement • Output amplitude optimized for circuits wi |
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Infineon |
Analog AMR/GMR Angle Sensors • Single and dual die sensor with AMR or GMR technology • Separate supply pins for top and bottom sensor • Low current consumption and quick start up • 180°(AMR) and 360°(GMR) contactless angle measurement • Output amplitude optimized for circuits wi |
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Infineon |
650V half bridge gate driver • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 |
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Infineon |
650V half bridge gate driver • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 |
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Infineon |
Analog AMR/GMR Angle Sensors • Single and dual die sensor with AMR or GMR technology • Separate supply pins for top and bottom sensor • Low current consumption and quick start up • 180°(AMR) and 360°(GMR) contactless angle measurement • Output amplitude optimized for circuits wi |
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Infineon |
10 Channel LCD Filter Array • 10 channel integrated RC filter array • ESD protection according to IEC61000-4-2 up to 15 kV contact discharge on all IOs • Wafer Level Package with SnAgCu solder balls • RoHS and WEEE compliant package • Improved package for increased drop test re |
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Infineon |
IGBT and Applications...............................................................................................................................3 Mechanical Parameters.................................................................................... |
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Infineon |
IGBT and Applications...............................................................................................................................3 Mechanical Parameters.................................................................................... |
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Infineon |
Analog Absolute Pressure Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies AG |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P –1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated |
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Infineon |
Power-Transistor |
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Infineon Technologies |
IGBT • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC109T120R3 VCE ICn Die |
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Infineon Technologies |
IGBT • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC109T120R3L |
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Desde 2024. D4U Semiconductor.
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