2ED21094S06J |
Part Number | 2ED21094S06J |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excell... |
Features |
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low resistance bootstrap diode • Logic operational up to –11 V on VS Pin • Negative voltage tolerance on inputs of –5 V • Independent under voltage lockout for both channels • Schmitt trigger inputs with hysteresis • 3.3 V, 5 V and 15 V input logic compatible • Maximum supply voltage of 25 V • Dual package options of DSO... |
Document |
2ED21094S06J Data Sheet
PDF 1.03MB |
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