IGC109T120T6RM |
Part Number | IGC109T120T6RM |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 8172... |
Features |
• 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules Applications: • medium power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environme... |
Document |
IGC109T120T6RM Data Sheet
PDF 65.30KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IGC109T120T6RH |
Infineon |
IGBT | |
2 | IGC109T120T6RL |
Infineon |
IGBT | |
3 | IGC100T65T8RM |
Infineon |
IGBT | |
4 | IGC10R60DE |
Infineon |
IGBT | |
5 | IGC10R60SE |
Infineon |
IGBT | |
6 | IGC10T65QE |
Infineon |
IGBT |