Busque con el número de pieza junto con el fabricante o la descripción
2ED2109S06F |
Click to view a larger image
| Part Number | 2ED2109S06F |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excell... |
| Features |
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low resistance bootstrap diode • Logic operational up to –11 V on VS Pin • Negative voltage tolerance on inputs of –5 V • Independent under voltage lockout for both channels • Schmitt trigger inputs with hysteresis • 3.3 V, 5 V and 15 V input logic compatible • Maximum supply voltage of 25 V • Dual package options of DSO... |
| Document |
 2ED2109S06F Data Sheet
PDF 1.03MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2ED21094S06J |
Infineon |
650V half bridge gate driver |
|
| 2 | 2ED21084S06J |
Infineon |
650V half bridge gate driver |
|
| 3 | 2ED2108S06F |
Infineon |
650V half bridge gate driver |
|
| 4 | 2ED21814S06J |
Infineon |
650V high-side and low-side gate driver |
|
| 5 | 2ED2181S06F |
Infineon |
650V high-side and low-side gate driver |
|
| 6 | 2ED21834S06J |
Infineon |
650V half-bridge gate driver |
|
Desde 2024. D4U Semiconductor.
|