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SIGC109T120R3L |
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| Part Number | SIGC109T120R3L |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bere... |
| Features |
• 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC109T120R3L VCE ICn Die Size 10.47 x 10.44 mm2 Package sawn on foil Ordering Code Q67050A4210-A101 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bon... |
| Document |
 SIGC109T120R3L Data Sheet
PDF 98.09KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SIGC109T120R3 |
Infineon Technologies |
IGBT |
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| 2 | SIGC109T120R3E |
Infineon |
IGBT |
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| 3 | SIGC109T120R3LE |
Infineon |
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|
| 4 | SIGC100T60R3E |
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IGBT |
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| 5 | SIGC100T65R3E |
Infineon |
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| 6 | SIGC101T170R3 |
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IGBT |
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