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IGC109T120T6RH |
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| Part Number | IGC109T120T6RH |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 8172... |
| Features |
• 1200V Trench + Field stop technology • low VCE(sat) • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium / high power modules Applications: • medium / high power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage env... |
| Document |
 IGC109T120T6RH Data Sheet
PDF 67.85KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IGC109T120T6RL |
Infineon |
IGBT |
|
| 2 | IGC109T120T6RM |
Infineon |
IGBT |
|
| 3 | IGC100T65T8RM |
Infineon |
IGBT |
|
| 4 | IGC10R60DE |
Infineon |
IGBT |
|
| 5 | IGC10R60SE |
Infineon |
IGBT |
|
| 6 | IGC10T65QE |
Infineon |
IGBT |
|
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