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Inchange Semiconductor |
Silicon NPN Power Transistor STICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1.0mA; |
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Inchange Semiconductor |
Silicon PNP Power Transistor AL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Volta |
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Inchange Semiconductor |
Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -6 V VCE(sat) Collector-Emitte |
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Inchange Semiconductor |
Silicon NPN Power Transistor ISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.54 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spe |
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Inchange Semiconductor |
Silicon NPN Power Transistor Rth j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE243 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER |
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Inchange Semiconductor |
Silicon NPN Power Transistor nction to Ambient 8.34 ℃/W 83.4 ℃/W MJE200 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJE200 |
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Inchange Semiconductor |
Silicon NPN Power Transistors ALUE 1.25 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector- |
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Inchange Semiconductor |
Silicon PNP Power Transistors Thermal Resistance,Junction to Ambient 83.4 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJE172 ELECTRICAL CHARACTERISTICS TC=25℃ unles |
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Inchange Semiconductor |
Silicon PNP Power Transistors /W MJE170 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Vo |
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Inchange Semiconductor |
Silicon NPN Power Transistor ICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE |
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Inchange Semiconductor |
Silicon NPN Power Transistor j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS |
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Inchange Semiconductor |
Silicon NPN Power Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5uA; IB= 0 V(BR)EBO Emitter -Base Breakdown Voltage IE= 5 |
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Inchange Semiconductor |
Silicon NPN Power Transistor SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRIC |
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Inchange Semiconductor |
Silicon PNP Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistors 3.12 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unles otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitte |
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Inchange Semiconductor |
Silicon NPN Power Transistor ℃/W isc Product Specification MJE8503 isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE8503 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDI |
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Inchange Semiconductor |
Silicon NPN Power Transistor BOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W MJE8502 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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Inchange Semiconductor |
Silicon PNP Power Transistor al Resistance,Junction to Ambient MA X 8.34 UNIT ℃/W 83.4 ℃/W MJE253 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE253 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified S |
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Inchange Semiconductor |
TO-220C Silicon NPN Power Transistor |
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Desde 2024. D4U Semiconductor.
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