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MJE9780 |
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| Part Number | MJE9780 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Standard TO–220 Package ·Gain Range of 50 – 200 at 500 mAdc/10 volts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forvertical output of ... |
| Features |
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-150
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA ; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-0.8
V
VBE(on) Base-Emitter On Voltage
IC= -0.5A ; VCE= -4V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -150V ; IE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-10 μA
hFE 1
DC Current Gain
IC= -0.5A ; VCE= -10V
50
200
hFE 2
DC Current Gain
IC= -0.05A ; VCE= -10V
60
fT
Current... |
| Document |
 MJE9780 Data Sheet
PDF 212.86KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJE9780 |
Motorola |
PNP SILICON POWER TRANSISTOR |
|
| 2 | MJE9780 |
ON |
PNP SILICON POWER TRANSISTOR |
|
| 3 | MJE105 |
Motorola |
5 Ampere Power Transistor |
|
| 4 | MJE105 |
ETC |
5 Ampere Power Transistor |
|
| 5 | MJE105K |
ETC |
5 Ampere Power Transistor |
|
| 6 | MJE1100 |
Motorola Semiconductor |
Transistor |
|
Desde 2024. D4U Semiconductor.
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