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MJE9780 PNP SILICON POWER TRANSISTOR


MJE9780
Part Number MJE9780
Distributor Stock Price Buy
Inchange Semiconductor
MJE9780
Part Number MJE9780
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·Standard TO–220 Package ·Gain Range of 50 – 200 at 500 mAdc/10 volts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forvertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt .
Features TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.8 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -4V -1.5 V ICBO Collector Cutoff Current VC.
ON
MJE9780
Part Number MJE9780
Manufacturer ON
Title PNP SILICON POWER TRANSISTOR
Description ON Semiconductort PNP Silicon Power Transistor The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor. Features: • Standard TO–220AB Package • Gain Range of 50 – 200 at 500 mAdc/10 volts MAXI.
Features
• Standard TO
  –220AB Package
• Gain Range of 50
  – 200 at 500 mAdc/10 volts MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Collector
  –Emitter Sustaining Voltage Collector
  –Base Voltage Emitter
  –Base Voltage Collector Current — Continuous Collector Current — Peak Total Power Dissipation (TA = 25°C) Derate above 25°C VCEO VCBO VEBO IC ICM PD Total Power Dissipation Derate above 2.

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