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MJE3055AT |
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| Part Number | MJE3055AT |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150-260@IC= 1A ·Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5uA; IB= 0
V(BR)EBO Emitter -Base Breakdown Voltage
IE= 50uA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC... |
| Document |
 MJE3055AT Data Sheet
PDF 213.97KB |
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Desde 2024. D4U Semiconductor.
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