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MJE13003A |
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| Part Number | MJE13003A |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable ... |
| Features |
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.12 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 89 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1 A ;IB= 0.25A
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
ICEO
Collector Cutoff Cur... |
| Document |
 MJE13003A Data Sheet
PDF 213.91KB |
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Desde 2024. D4U Semiconductor.
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