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| Part Number | MJE13003 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MJE13003 |
| Manufacturer | ON Semiconductor |
| Title | NPN Silicon Power Transistor |
| Description | MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Con. |
| Features |
• Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C tc @ 1 A, 100_C is 290 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage ÎÎÎÎÎÎÎÎÎÎ. |
| Part Number | MJE13003 |
| Manufacturer | ARTCHIP |
| Title | NPN EPITAXIAL PLANAR TRANSISTOR |
| Description | The MJE13003 is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ...... |
| Features |
• High Speed Switching • Low Saturation Voltage • High Reliability Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipati. |
| Part Number | MJE13003 |
| Manufacturer | SavantIC |
| Title | Silicon NPN Power Transistors |
| Description | ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting bas. |
| Features | V A A A A A A W MAX 3.12 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE13003 CHARACTERISTICS Tj=25 unles otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 400 V VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-emitter saturation voltage Collector-emitter saturation voltage . |
| Part Number | MJE13003 |
| Manufacturer | KEC |
| Title | TRIPLE DIFFUSED NPN TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA MJE13003 TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHAR. |
| Features | Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tst. |
| Part Number | MJE13003 |
| Manufacturer | SEMTECH |
| Title | NPN Silicon Power Transistors |
| Description | MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, S. |
| Features |
• Reverse Biased SOA with Inductive Loads TC=100oC • Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC • tc @ 1A, 100oC is 290 ns (Typ). • 700V Blocking Capability • SOA and Switching Applications Information. Absolute Maximum Ratings (T a=25oC) TO-225AA Package Symbol Value MJE13002 MJE13003 Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Con. |
| Part Number | MJE13003 |
| Manufacturer | DC COMPONENTS |
| Title | NPN EPITAXIAL PLANAR TRANSISTOR |
| Description | Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126 Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEV 700 V VCEO 400 V Emitter-Base Voltag. |
| Features | ngs at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions BVCEV 700 - - V IC=1mA, VBE(off)=1.5V Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA Collector Cutoff Current ICEV - - 1 mA VCE=700V, VBE(off)=1.5V Emitter Cutoff Current IEBO - - 1 mA VEB=9V VCE(sat)1 - Collector-Emitter Saturation Voltage(1) . |
| Part Number | MJE13003 |
| Manufacturer | Motorola |
| Title | 1.5 AMPERE NPN SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 . |
| Features |
• Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1 A, 100_C is 290 ns (Typ). • 700 V Blocking Capability • SOA and Switching Applications Information. ™ Data Sheet MJE13002 * MJE13003 * *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ. |
| Part Number | MJE13003 |
| Manufacturer | MCC |
| Title | NPN Silicon Plastic-Encapsulate Transistor |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE13003 Features • • • • • • • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capabl. |
| Features |
• • • • • • • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 1.5Watts of Power Dissipation. Collector-current 1.5A Collector-base Voltage 700V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 TO-. |
| Part Number | MJE13003 |
| Manufacturer | CDIL |
| Title | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS |
| Description | Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Juncti. |
| Features | **VCEO(sus) IC=10mA, IB=0 MJE13002 MJE13003 VCEV=Rated Value, VBE(off)=1.5V VCEV=Rated Value, VBE(off)=1.5V,Tc=100ºC VEB=9V, IC=0 SYMBOL VCEO(sus) VCEV VEBO IC *ICM IB *IBM IE *IEM PD PD Tj, Tstg MJE13002 300 600 9.0 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 40 320 - 65 to 150 MJE13003 400 700 UNIT V V V A A A A A A W mW/ ºC W mW/ ºC ºC MIN 300 400 TYP MAX UNIT V V Collector Cuttoff Current ICEV . |
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Desde 2024. D4U Semiconductor.
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