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MJE253 |
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| Part Number | MJE253 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to t... |
| Features |
al Resistance,Junction to Ambient
MA X
8.34
UNIT ℃/W
83.4 ℃/W
MJE253
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
MJE253
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A ;IB= -0.2A
VBE(on) Base-Emitter On Voltage
ICBO
Coll... |
| Document |
 MJE253 Data Sheet
PDF 214.73KB |
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