MJE243 |
Part Number | MJE243 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the P... |
Features |
Rth j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W
isc Website:www.iscsemi.com
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isc Silicon NPN Power Transistor
MJE243
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 50mA
0.3
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A
0.6
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A ;IB= 0.2A
1.8
V
VBE(on) Base-Emitter On Voltage
... |
Document |
MJE243 Data Sheet
PDF 214.48KB |
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