Inchange Semiconductor BUX Hoja de datos

No.	parte #	Fabricante	Descripción
1	BUX12	Inchange Semiconductor	Silicon NPN Power Transistor nless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1
2	BUX18C	Inchange Semiconductor	Silicon NPN Power Transistor unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO
3	BUX45	Inchange Semiconductor	Silicon NPN Power Transistor Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(s
4	BUX11N	Inchange Semiconductor	Silicon NPN Power Transistor con NPN Power Transistor BUX11N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 V
5	BUX18B	Inchange Semiconductor	Silicon NPN Power Transistor unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO
6	BUX41N	Inchange Semiconductor	Silicon NPN Power Transistor emark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=50mA;
7	BUX31A	Inchange Semiconductor	Silicon NPN Power Transistor j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUX31/A/B · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PA
8	BUX32B	Inchange Semiconductor	Silicon NPN Power Transistor c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUX32/A/B · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARA
9	BUX21	Inchange Semiconductor	Silicon NPN Power Transistor nsistor BUX21 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
10	BUX18	Inchange Semiconductor	Silicon NPN Power Transistor unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO
11	BUX18A	Inchange Semiconductor	Silicon NPN Power Transistor unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO
12	BUX348	Inchange Semiconductor	Silicon NPN Power Transistor TRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ☆VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VEBO Emitter-Base Voltage IE = 10 mA ☆VCE(sat) ☆VBE(sat) ICBO Collector-Emitter Saturation
13	BUX97B	Inchange Semiconductor	Silicon NPN Power Transistor NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(
14	BUX97A	Inchange Semiconductor	Silicon NPN Power Transistor NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(
15	BUX20A	Inchange Semiconductor	Silicon NPN Power Transistor STICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage I
16	BUX10P	Inchange Semiconductor	Silicon NPN Power Transistor ied SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB
17	BUX98PI	Inchange Semiconductor	Silicon NPN Power Transistor
18	BUX88	Inchange Semiconductor	Silicon NPN Power Transistor otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 9A; IB= 4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 6A VBE(s
19	BUX78A	Inchange Semiconductor	Silicon NPN Power Transistor =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 VCES Collector-Emitter Voltage IC= -2mA; VBE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Col
20	BUX78	Inchange Semiconductor	Silicon NPN Power Transistor C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 VCES Collector-Emitter Voltage IC= -2mA; VBE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Co