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BUX18C |
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| Part Number | BUX18C |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot vari... |
| Features |
unction to Case
MAX UNIT 1.17 ℃/W
BUX18/A/B/C
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
BUX18/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BUX18
200
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BUX18A BUX18B
IC= 50mA ; IB= 0
275 V
325
BUX18C
375
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
BUX18 BUX18A BUX18B/C
IC= 6A; IB= 1.2A IC= 5A; IB= 1A IC= 4A; IB= 0.8A
2.5
V
VBE(on) IC... |
| Document |
 BUX18C Data Sheet
PDF 206.49KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUX18 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | BUX18 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | BUX18A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | BUX18B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | BUX10 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
|
| 6 | BUX10 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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