Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BUX18 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUX18 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in off-l. |
| Features | unction to Case MAX UNIT 1.17 ℃/W BUX18/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX18/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUX18 200 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX18A BUX18B IC= 50mA ; IB= 0 275 V 325 BUX18C 375 V(B. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUX10 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
|
| 2 | BUX10 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 3 | BUX10 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BUX10 |
NTE |
Silicon NPN Transistor |
|
| 5 | BUX10 |
Semelab |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 6 | BUX10 |
INCHANGE |
NPN Transistor |
|
| 7 | BUX10A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | BUX10P |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | BUX10X |
Seme LAB |
NPN MULTI - EPITAXIAL POWER TRANSISTOR |
|
| 10 | BUX11 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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