BUX45 |
Part Number | BUX45 |
Manufacturer | Inchange Semiconductor |
Description | ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.) @ IC= 1A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for... |
Features |
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 400V; IB= 0
VCB= 500V; IE= 0 VCB= 500V; IE= 0;TC=125℃
VEB= 5V;... |
Document |
BUX45 Data Sheet
PDF 204.49KB |
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