Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BUX40 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUX40 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING(see fig.2) PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT. |
| Features | itter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2mA; IB=0 IE=50mA; IC=0 IC=10 A;IB=1 A IC=15 A;IB=1.88 A IC=15 A;IB=1.88 A VCE=160V;VBE=-1.5V. |
| Part Number | BUX40 |
| Manufacturer | Comset Semiconductors |
| Title | HIGH POWER TRANSISTOR |
| Description | NPN BUX40 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO. |
| Features | ted Symbol VCEO(SUS) VEB0 ICEO ICEX IEBO hFE VCE(SAT) VBE(SAT) IS/B ES/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Test Condition(s) IC=200 mA Min 125 7 15 8 4 1 15 8 - Typ 0.6 0.9 1.7 0.35 0.85 0.14 Max 1 1 5 1 45 1.2 1.6 2 1.2 1 0.4 Unit V V mA mA mA V A A MHz IC=0A , IE=50 mA VCE=100 V , IB=0A VCE= VCEX, VBE= -1.5V Collec. |
| Part Number | BUX40 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max.) @IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolu. |
| Features | isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUX40A |
INCHANGE |
NPN Transistor |
|
| 2 | BUX41 |
Motorola Inc |
NPN Transistor |
|
| 3 | BUX41 |
STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR |
|
| 4 | BUX41 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | BUX41 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | BUX41 |
INCHANGE |
NPN Transistor |
|
| 7 | BUX41N |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | BUX41N |
Comset Semiconductors |
HIGH POWER TRANSISTOR |
|
| 9 | BUX41N |
Seme LAB |
Bipolar NPN Device |
|
| 10 | BUX42 |
Motorola Inc |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|