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BUX11N |
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| Part Number | BUX11N |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor contro... |
| Features |
con NPN Power Transistor
BUX11N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A ;IB= 1.88A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A ;IB= 1.88A
ICEO
Collector Cutoff Current
ICBO
Collector-Base Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 130V; IB= 0
VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TC=125℃... |
| Document |
 BUX11N Data Sheet
PDF 206.15KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUX11 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 2 | BUX11 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BUX11 |
Comset Semiconductors |
HIGH POWER TRANSISTOR |
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| 4 | BUX11 |
INCHANGE |
NPN Transistor |
|
| 5 | BUX11A |
ETC |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR |
|
| 6 | BUX11N |
Seme LAB |
Bipolar NPN Device |
|
Desde 2024. D4U Semiconductor.
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