Busque con el número de pieza junto con el fabricante o la descripción
BUX41N |
Click to view a larger image
| Part Number | BUX41N |
| Manufacturer | Inchange Semiconductor |
| Description | · Collector-Emitter Voltage- : VCEO= 160V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design... |
| Features |
emark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Voltage
Sustaining IC= 50mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=50mA; IC= 0
VCE(sat)-1 VCE(sat)-2
Collector-Emitter Voltage
Collector-Emitter Voltage
Saturation IC=8A; IB=0.8A Saturation IC=12A; IB=1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC=12A; IB=1.5A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE=130V; IB= 0
VCB= 220V; IE= 0 VCB= 220V; IE= 0; TC= 125℃... |
| Document |
 BUX41N Data Sheet
PDF 206.80KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUX41 |
Motorola Inc |
NPN Transistor |
|
| 2 | BUX41 |
STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR |
|
| 3 | BUX41 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BUX41 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | BUX41 |
INCHANGE |
NPN Transistor |
|
| 6 | BUX41N |
Comset Semiconductors |
HIGH POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|