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BUX10P |
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| Part Number | BUX10P |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipme... |
| Features |
ied
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
125
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
0.6
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A
1.2
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A ;IB= 2A
2.0
V
ICEO
Collector Cutoff Current
ICBO
Collector-Base Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 100V; IB= 0
VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TC=125℃
VEB= 5V; IC= 0
1.5 mA
1.5 6.0
mA
1.0... |
| Document |
 BUX10P Data Sheet
PDF 215.78KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUX10 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
|
| 2 | BUX10 |
TT |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 3 | BUX10 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BUX10 |
NTE |
Silicon NPN Transistor |
|
| 5 | BUX10 |
Semelab |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
|
| 6 | BUX10 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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