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Inchange Semiconductor |
Silicon PNP Power Transistor se Breakdown Voltage IC= -1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitte |
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Inchange Semiconductor |
Silicon PNP Power Transistor R)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.5 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -12 |
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Inchange Semiconductor |
Silicon PNP Power Transistor ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Curr |
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Inchange Semiconductor |
Silicon PNP Power Transistor reakdown Voltage IC= -30mA; IB= 0 -130 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -5mA -3.0 V ICBO Collector Cutoff Current VCB= -130V; IE= 0 -100 μA IC |
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Inchange Semiconductor |
2SB1217 ss otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB=B -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB=B -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitt |
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Inchange Semiconductor |
Silicon PNP Power Transistors ltage IC= -10A; IB= -1A -2.5 V VBE(on) Base -Emitter On Voltage IC= -8A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -180V; IE=0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC=0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V |
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Inchange Semiconductor |
Silicon PNP Power Transistor PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage VBE(sat)NOTE Base-Emitter Saturation Voltage IEBO Emitter Cutoff Current ICBO Collector Cutoff Current hFE1NOTE DC Current Gain hFE2NOTE DC Current Ga |
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Inchange Semiconductor |
Silicon PNP Power Transistor -10mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(on) Base-Emitter On Voltage ICBO Collector |
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Inchange Semiconductor |
Silicon PNP Power Transistor llector-Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current |
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Inchange Semiconductor |
Silicon PNP Power Transistor PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -150mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor n Power Transistor 2SB974 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -2mA VBE(sat) Base-Emitter Saturation Voltage IC= -2A, IB= -2mA ICB |
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Inchange Semiconductor |
Silicon PNP Power Transistor CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= |
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Inchange Semiconductor |
Silicon PNP Power Transistors n) Base -Emitter On Voltage IC= -8A; VCE= -5V ICBO Collector Cutoff Current VCB= -160V ; IE=0 IEBO Emitter Cutoff Current VEB= -3V; IC=0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current |
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Inchange Semiconductor |
Silicon PNP Power Transistors ltage IC= -10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Vol |
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Inchange Semiconductor |
Silicon PNP Power Transistors =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -25mA VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -25mA ICBO Collector Cutoff Current VCB= -100V ; IE= 0 IEB |
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Inchange Semiconductor |
Silicon PNP Power Transistors er Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -50mA; VCE= -5V hFE |
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Inchange Semiconductor |
Silicon PNP Power Transistor Emitter breakdown voltage IC=-1mA -160 V BVEBO Emitter-Base breakdown voltage IE=-50uA -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -100mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IE |
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Inchange Semiconductor |
Silicon PNP Power Transistor ETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -200mA, IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A, IB= -10mA VCE(sat)-2 Collector-Emitter Saturation |
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Inchange Semiconductor |
Silicon PNP Power Transistor (BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A IC |
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Inchange Semiconductor |
Silicon PNP Power Transistor AL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 VCE(sat) Collector-Emitter Saturation Vol |
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Desde 2024. D4U Semiconductor.
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