Distributor | Stock | Price | Buy |
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2SB955 |
Part Number | 2SB955 |
Manufacturer | Inchange Semiconductor |
Title | Silicon PNP Power Transistor |
Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1126 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . |
Features | ETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -200mA, IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A, IB= -10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A, IB= -0.1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -5A, IB= -10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -10A, IB=. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB950 |
Panasonic Semiconductor |
PNP Transistor | |
2 | 2SB950 |
Panasonic Semiconductor |
Power Transistors | |
3 | 2SB950A |
Panasonic Semiconductor |
Power Transistors | |
4 | 2SB950A |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
5 | 2SB951 |
Panasonic Semiconductor |
PNP Transistor | |
6 | 2SB951 |
Panasonic Semiconductor |
Power Transistors | |
7 | 2SB951A |
Panasonic Semiconductor |
PNP Transistor | |
8 | 2SB951A |
Panasonic Semiconductor |
Power Transistors | |
9 | 2SB952 |
Panasonic Semiconductor |
PNP Transistor | |
10 | 2SB952 |
Panasonic Semiconductor |
Power Transistors |