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2SB955 |
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| Part Number | 2SB955 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement ... |
| Features |
ETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -200mA, IE= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A, IB= -10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A, IB= -0.1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -5A, IB= -10mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -10A, IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -120V, IE= 0
ICEO
Collector Cutoff Current
VCE= -100V, RBE= ∞
hFE
DC Current Gain
IC= -5A; VCE= -3V
2SB955
MIN TYP. MAX UNIT
-120
V
-7
V
-1.5
... |
| Document |
 2SB955 Data Sheet
PDF 213.64KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB950 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB950 |
Panasonic Semiconductor |
Power Transistors |
|
| 3 | 2SB950A |
Panasonic Semiconductor |
Power Transistors |
|
| 4 | 2SB950A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2SB951 |
Panasonic Semiconductor |
PNP Transistor |
|
| 6 | 2SB951 |
Panasonic Semiconductor |
Power Transistors |
|
Desde 2024. D4U Semiconductor.
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