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2SB1203 Silicon PNP Power Transistor

2SB1203


2SB1203
Part Number 2SB1203
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2SB1203

Sanyo Semicon Device
2SB1203
Part Number 2SB1203
Manufacturer Sanyo Semicon Device
Title PNP/NPN Epitaxial Planar Silicon Transistors
Description Ordering number:EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions unit:mm 2045B [2SB1203/2SD1803] Featu.
Features
· Low collector-to-emitter saturation voltage.
· High current and high fT.
· Excellent linearity of hFE.
· Fast switching speed.
· Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1203/2SD1803] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products .

2SB1203

BLUE ROCKET ELECTRONICS
2SB1203
Part Number 2SB1203
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon PNP transistor
Description TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features ,,fT ,,。 Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time.  / Applications ,,。 Relay drivers, high-speed inverters, general high-current switching applications. / Equivalen.
Features ,,fT ,,。 Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time.  / Applications ,,。 Relay drivers, high-speed inverters, general high-current switching applications. / Equivalent Circuit / Pinning 12 3 4 PIN1:Base PIN 2,4:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 70~140 R 100~200 S 140~280 T.

2SB1203

Kexin
2SB1203
Part Number 2SB1203
Manufacturer Kexin
Title Transistors
Description SMD Type High-Current Switching Applications 2SB1203 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-to-emitter saturation voltage. High current and high fT. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Fast swi.
Features Low collector-to-emitter saturation voltage. High current and high fT. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Fast switching speed. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emi.

2SB1203

ON Semiconductor
2SB1203
Part Number 2SB1203
Manufacturer ON Semiconductor
Title Bipolar Transistor
Description Ordering number : EN2085C 2SB1203/2SD1803 Bipolar Transistor (–)50V, (–)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • http://onsemi.com Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features • • • • High current and high fT Low.
Features



• High current and high fT Low collector-to-emitter saturation voltage
• Fast switching speed Excellent linearity of hFE Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Specifications ( ): 2SB1203 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (.

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