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2SB1203 |
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| Part Number | 2SB1203 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High current and high fT ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perform... |
| Features |
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -150mA
V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE2
DC Current Gain
IC= -4A; VCE= -2V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth P... |
| Document |
 2SB1203 Data Sheet
PDF 253.16KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1201 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB1201 |
ON Semiconductor |
Bipolar Transistor |
|
| 3 | 2SB1201 |
Kexin |
Transistors |
|
| 4 | 2SB1201 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2SB1202 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SB1202 |
ON Semiconductor |
Bipolar Transistor |
|
Desde 2024. D4U Semiconductor.
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